Microchip Technology APTGT400A60D3G IGBT模块 PM-IGBT-TFS-D3

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.25 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 500 A