Microchip Technology APTGT50H60RT3G IGBT模块 PM-IGBT-TFS-SP3F

Technology: Si

Configuration: Full Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 176 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 80 A