Microchip Technology APTGT75DA60T1G IGBT模块 PM-IGBT-TFS-SP1
ModelAPTGT75DA60T1G
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Technology: Si
Unit Weight: 80 g
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 250 W
Gate-Emitter Leakage Current: 600 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 100 A
