Microchip Technology DN2625K4-G MOSFET 小信号 250V 3.3A

Width: 6.1 mm

Height: 2.39 mm

Length: 6.73 mm

Fall Time: 20 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 1.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 mS

Rds On - Drain-Source Resistance: 3.5 Ohms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V