Microchip Technology DN3545N3-G FET 450V 20欧姆

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Fall Time: 40 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 740 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 136 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 mS

Rds On - Drain-Source Resistance: 20 Ohms

Vds - Drain-Source Breakdown Voltage: 450 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V