Microchip Technology DRF1200 高侧、低侧射频MOSFET（VDMOS）驱动混合器 1000 V 1000 W 30 MHz T2B

Width: 1 mm

Height: 0.3 mm

Length: 1.5 mm

Fall Time: 2.5 ns

Rise Time: 2.5 ns

Technology: Si

Unit Weight: 48 g

Configuration: Inverting, Non-Inverting

Pd - Power Dissipation: 624 W

Rds On - Drain-Source Resistance: 900 mOhms