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Fall Time: 6.4 ns
Rise Time: 11 ns
Technology: Si
Unit Weight: 15 mg
Channel Mode: Depletion
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Vgs - Gate-Source Voltage: - 12 V, + 600 mV
Typical Turn-On Delay Time: 3.8 ns
Typical Turn-Off Delay Time: 1 ns
Id - Continuous Drain Current: 330 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 25 C
Forward Transconductance - Min: 200 mmho
Rds On - Drain-Source Resistance: 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 9 V
Vgs th - Gate-Source Threshold Voltage: 3 V
