Microchip Technology MSC025SMA120B SiC MOSFETS MOSFET 硅碳化物 1200 V 25 毫欧 TO-247

Fall Time: 25 ns

Rise Time: 15 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 232 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 577 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 63 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 113 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 31 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.9 V