Microchip Technology MSC030SDA120B 肖特基碳化硅二极管 1200 V, 30 A SiC SBD

Technology: SiC

Unit Weight: 8.522 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 69 A

Ir - Reverse Current: 9 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 300 W

Ifsm - Forward Surge Current: 280 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV