Microchip Technology MSC035SMA170B SiC MOSFETS MOSFET 硅碳化物 1700 V 35 毫欧 TO-247

Fall Time: 17 ns

Rise Time: 10 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 178 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 370 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 68 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V