Microchip Technology MSCGLQ50DDU120CTBL2NG IGBT模块 PM-IGBT-SBD-BL2

Technology: Si

Configuration: Double Dual Common Source

Mounting Style: Screw Mount

Pd - Power Dissipation: 375 W

Gate-Emitter Leakage Current: 150 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 110 A