Microchip Technology MSCSM120AM042D3AG 相腿SiC功率模块 PM-MOSFET-SIC-D3

Fall Time: 67 ns

Rise Time: 74 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.031 kW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 66 ns

Typical Turn-Off Delay Time: 166 ns

Id - Continuous Drain Current: 495 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.2 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V