Microchip Technology MSCSM170TAM23CTPAG MOSFET / SiC SBD PM-MOSFET-SIC-SBD-SP6P

Fall Time: 19 ns

Rise Time: 17 ns

Technology: SiC

Mounting Style: Screw Mount

Vf - Forward Voltage: 1.5 V

Pd - Power Dissipation: 588 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 122 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 17.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V