Microchip Technology TN2510N8-G MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Power consumption: 1.6W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 730mA

Input Capacitance (Ciss): 125pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.5Ohm

Drive Voltage (Max Rds On, Min Rds On): 3|10V