Microchip Technology TN5325N3-G MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Power consumption: 740mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 250V

Continuous drain current: 215mA

Input Capacitance (Ciss): 110pF

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 7Ohm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V