Microchip Technology TP2104N3-G FET 40V 6欧姆

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Fall Time: 5 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 740 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 175 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 mmho

Rds On - Drain-Source Resistance: 10 Ohms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V