Type: Power MOSFET
Vgs(th): 4 V
Gate Charge (Qg): 225nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 1000V
Continuous drain current: 11A
Input Capacitance (Ciss): 3660pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1Ohm