Microsemi APT30N60SC6 Power MOSFET

Type: Power MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 88nC

Power consumption: 219W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 30A

Input Capacitance (Ciss): 2267pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 125mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet