Microsemi APT33N90JCCU3 MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 270nC

Power consumption: 290W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 900V

Continuous drain current: 33A

Input Capacitance (Ciss): 6800pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 120mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V