Microsemi APT38N60SC6 MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 112nC

Power consumption: 278W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 38A

Input Capacitance (Ciss): 2826pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 99mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet