Microsemi APT40SM120B MOSFET

Vgs(th): 3 V

Vgs (Max): +25|-10V

Gate Charge (Qg): 130nC

Power consumption: 273W

Technology System: SiCFET(Silicon Carbide)

Drain to Source voltage: 1200V

Continuous drain current: 41A

Input Capacitance (Ciss): 2560pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 100mOhm

Drive Voltage (Max Rds On, Min Rds On): 20V

Datasheet