Vgs(th): 4 V
Gate Charge (Qg): 225nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 500V
Continuous drain current: 26A
Input Capacitance (Ciss): 4440pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 200mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
