Microsemi JANTX2N4150 双极型晶体管 BJTs 70V 10A 1W 功率 BJT THT

Technology: Si

Unit Weight: 6.872 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 200 at 1 A, 5 VDC

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 1 A, 5 VDC

Collector- Emitter Voltage VCEO Max: 70 V

Collector-Emitter Saturation Voltage: 600 mV