Nexperia BST82,235 MOSFETs BST82/SOT23/TO-236AB

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 830 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 190 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 10 Ohms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1 V