Nexperia PMN34UP,115 MOSFET

Vgs(th): 0.95V

Vgs (Max): 8V

Gate Charge (Qg): 23nC

Power consumption: 540mW|6.25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 5A

Input Capacitance (Ciss): 1950pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 40mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V

Datasheet