Nexperia PMT200EPEX MOSFETs PMT200EPE/SOT223/SC-73

Fall Time: 20 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 15.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 8.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 2.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13.5 S

Rds On - Drain-Source Resistance: 167 mOhms

Vds - Drain-Source Breakdown Voltage: 70 V

Vgs th - Gate-Source Threshold Voltage: 3 V