Nexperia PMT21EN,115 MOSFET

Vgs(th): 2.5 V

Vgs (Max): 20V

Gate Charge (Qg): 14.4nC

Power consumption: 820mW|8.33W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 7.4A

Input Capacitance (Ciss): 588pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 21mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V