Nexperia PMXB56ENZ MOSFET 30 V，N沟槽型MOSFET

Fall Time: 2 ns

Rise Time: 12 s

Technology: Si

Unit Weight: 1.200 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 s

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 49 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V