NXP BUK954R4-80E,127 MOSFET

Vgs(th): 2.1 V

Vgs (Max): 10V

Gate Charge (Qg): 123nC

Power consumption: 349W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 80V

Continuous drain current: 120A

Input Capacitance (Ciss): 17130pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V

Datasheet