NXP BUK962R1-40E,118 MOSFET

Vgs(th): 2.1 V

Vgs (Max): 10V

Gate Charge (Qg): 87.8nC

Power consumption: 293W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 120A

Input Capacitance (Ciss): 13160pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V

Datasheet