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Vgs(th): 4 V
Gate Charge (Qg): 66nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 100V
Continuous drain current: 47A
Input Capacitance (Ciss): 3100pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 28mOhm
