NXP PMF280UN,115 Power MOSFET

Type: Power MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 0.89nC

Power consumption: 560mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 1.02A

Input Capacitance (Ciss): 45pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 340mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V