NXP PMN22XN,115 MOSFET

Vgs(th): 1.5 V

Vgs (Max): 12V

Gate Charge (Qg): 10nC

Power consumption: 545mW|6.25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 5.7A

Input Capacitance (Ciss): 585pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 27mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V