Technology: Si
Unit Weight: 14.400 mg
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Drain-Source Current at Vgs=0: 50 mA
Vds - Drain-Source Breakdown Voltage: 25 V
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Technology: Si
Unit Weight: 14.400 mg
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Drain-Source Current at Vgs=0: 50 mA
Vds - Drain-Source Breakdown Voltage: 25 V
直接联系认证专家