Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Drain-Source Current at Vgs=0: 7 mA to 60 mA
Vgs - Gate-Source Breakdown Voltage: 30 V
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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Drain-Source Current at Vgs=0: 7 mA to 60 mA
Vgs - Gate-Source Breakdown Voltage: 30 V
直接联系认证专家