onsemi NTE4153NT1G MOSFET 20V 915mA N沟道

Width: 0.85 mm

Height: 0.7 mm

Length: 1.6 mm

Fall Time: 7.6 ns

Rise Time: 4.4 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.82 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 3.7 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 915 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.4 S

Rds On - Drain-Source Resistance: 230 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV