onsemi SBRB20100CTT4G Schottky Diode

Type: Schottky Diode

Speed: Fast Recovery =< 500ns > 200mA(Io)

Diode type: Schottky

Diode Configuration: 1Pair Common Cathode

Circuit configuration: Dual Common Cathode

Average rectified current: 20A

Operating temperature range: -65 to 175C

Spannung – DC Reverse Vr Max: 100V

Repetitive peak reverse voltage: 100V

Spannung – Vorwärts (Vf) Max: 850mV@10A

Number of poles of the contact point: 3

最大非繰り返しサージ電流: 150A

Current - Average Rectified Io per Diode: 10A

Current - Reverse Leakage with Vr Applied: 100uA@100V

Datasheet