PANJIT PJS6601_S1_00001 MOSFETs 20V 互补增强型MOSFET

Fall Time: 10 ns, 45 ns

Rise Time: 47 ns, 27 ns

Technology: Si

Unit Weight: 14.194 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 4.6 nC, 5.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 18 ns, 78 ns

Id - Continuous Drain Current: 4.1 A, 3.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 56 mOhms, 100 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V