Rectron RM135N100HD-W 金属氧化物半导体场效应晶体管

Fall Time: 14 ns

Rise Time: 76 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 92 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 210 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 135 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 S

Rds On - Drain-Source Resistance: 4.6 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V