Rectron RM45P20D3 MOSFETs DFN MOSFET

Fall Time: 23 ns

Rise Time: 42 ns

Technology: Si

Unit Weight: 161.193 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 80 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 85 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 S

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 19 V

Vgs th - Gate-Source Threshold Voltage: 1 V