Rectron RM50N60LD-T MOSFETs MOSFET D-PAK

Fall Time: 5.5 ns

Rise Time: 5.1 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 85 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.4 ns

Typical Turn-Off Delay Time: 28.2 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V