Renesas Electronics HAF2015RJ-EL-E MOSFET N沟道 热敏场效应管 60V 2A 160毫欧 SOP-8

Fall Time: 1 us

Rise Time: 20 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 4.2 us

Typical Turn-Off Delay Time: 1 us

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 0.5 S

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V