Renesas Electronics NP100P06PLG-E1-AY MOSFETs MOSFET

Width: 9.15 mm

Height: 4.9 mm

Length: 10 mm

Fall Time: 100 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 300 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 275 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 43 S

Rds On - Drain-Source Resistance: 6 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V