Renesas Electronics NP32N055SLE-E1-AY MOSFET

Vgs(th): 2.5 V

Vgs (Max): 20V

Gate Charge (Qg): 41nC

Power consumption: 1.2|66W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 55V

Continuous drain current: 32A

Input Capacitance (Ciss): 2000pF

Operating temperature range: 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 24mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V