Renesas Electronics RJK6018DPM-00#T1 MOSFET

Vgs (Max): 30V

Gate Charge (Qg): 92nC

Power consumption: 60W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 30A

Input Capacitance (Ciss): 4100pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 235mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V