ROHM Semiconductor RCD080N25TL N沟MOSFET 250V 8A MOSFET

Fall Time: 15 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 2.7 S

Rds On - Drain-Source Resistance: 300 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 5 V