ROHM Semiconductor RD3H160SPFRATL MOSFETs P沟道 -45V Vdss -16A TO-252(DPAK); TO-252

Fall Time: 50 ns

Rise Time: 22 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 45 V

Vgs th - Gate-Source Threshold Voltage: 3 V