ROHM Semiconductor RD3L050SNTL1 N沟MOSFET 60V 5A TO-252(DPAK)

Fall Time: 8 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 109 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V