ROHM Semiconductor RD3L080SNTL1 MOSFET N沟道 60V 8A TO-252 (DPAK)

Fall Time: 10 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 9.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.8 S

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V