ROHM Semiconductor RD3P03BBHTL1 MOSFETs TO252 100V 35A N沟MOSFET

Fall Time: 12 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 12.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9.2 S

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V